Electrical Degradation Behavior of a-InGaZnO Thin-Film Transistors with Sm2O3 Gate Dielectrics

被引：0
|
作者：
Chen, Fa-Hsyang [1 ]
Liu, Jian-Hung [1 ]
Mondal, Somnath [1 ]
Wu, Bang-Li [1 ]
Pan, Tung-Ming [1 ]
机构：
[1] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan
来源：
IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2 | 2012年 / 19卷
关键词：
a-InGaZnO; TFT; Sm2O3; reliability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the electrical degradation behavior in amorphous-lnGaZnO (a-IGZO) thin-film transistors (TFTs) with Sm2O3 gate dielectrics. The negative shift of threshold voltage in Sm2O3 a-IGZO TFTs can be attributed to the generation of extra electrons from oxygen vacancies in the a-IGZO channel.
引用
收藏
页码：899 / 900
页数：2
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