Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure

被引：11

作者：

Chakraborty, Apurba ^{[1
]}

Ghosh, Saptarsi ^{[2
]}

Mukhopadhyay, Partha ^{[2
]}

Jana, Sanjay K. ^{[2
]}

Dinara, Syed Mukulika ^{[2
]}

Bag, Ankush ^{[2
]}

Mahata, Mihir K. ^{[2
]}

Kumar, Rahul ^{[2
]}

Das, Subhashis ^{[2
]}

Das, Palash ^{[2
]}

Biswas, Dhrubes ^{[1
,2
]}

机构：

[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, Adv Technol Dev Ctr, Kharagpur 721302, W Bengal, India

来源：

ELECTRONIC MATERIALS LETTERS | 2016年 / 12卷 / 02期

关键词：

HEMT; PA-MBE; reverse bias leakage current; FP emission; FN tunnelling; MOLECULAR-BEAM EPITAXY; GATE LEAKAGE; ALGAN/GAN; GAN;

D O I：

10.1007/s13391-015-5249-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure is investigated by current-voltage measurement in temperature range from 298 K to 423 K. The Higher electric field across the AlGaN barrier layer of AlGaN/InGaN/GaN double heterostructure due to higher polarization charge is found to be responsible for strong Fowler-Nordheim (FN) tunnelling in the electric field higher than 3.66 MV/cm. For electric field less than 3.56 MV/cm, the reverse bias leakage current is also found to follow the trap assisted Frenkel-Poole (FP) emission in low negative bias region. Analysis of reverse FP emission yielded the barrier height of trap energy level of 0.34 eV with respect to Fermi level.

引用

页码：232 / 236

页数：5

共 50 条

[21] Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire
Sumiya, Masatomo
Kindole, Dickson
Fukuda, Kiyotaka
Yashiro, Shuhei
Takehana, Kanji
Honda, Tohru
Imanaka, Yasutaka
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2020, 257 (04):
[22] Leakage current transport mechanism under reverse bias in Au/Ni/GaN Schottky barrier diode
Peta, Koteswara Rao
Kim, Moon Deock
SUPERLATTICES AND MICROSTRUCTURES, 2018, 113 : 678 - 683
[23] Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias
Tang, Xi
Li, Baikui
Moghadam, Hamid Amini
Tanner, Philip
Han, Jisheng
Li, Hui
Dimitrijev, Sima
Wang, Jiannong
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (12)
[24] In Situ AlGaN Interlayer for Reducing the Reverse Leakage Current of InGaN Light-Emitting Diodes
Li, Yangfeng
Yang, Rong
Jiang, Yang
Jia, Haiqiang
Wang, Wenxin
Chen, Hong
IEEE ELECTRON DEVICE LETTERS, 2023, 44 (05) : 777 - 780
[25] Reverse Gate-Current of AlGaN/GaN HFETs: Evidence of Leakage at Mesa Sidewalls
Mojaver, Hassan Rahbardar
Valizadeh, Pouya
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (04) : 1444 - 1449
[26] Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation
Zheng Xue-Feng
Fan Shuang
Chen Yong-He
Kang Di
Zhang Jian-Kun
Wang Chong
Mo Jiang-Hui
Li Liang
Ma Xiao-Hua
Zhang Jin-Cheng
Hao Yue
CHINESE PHYSICS B, 2015, 24 (02)
[27] Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors
Hasegawa, H
Inagaki, T
Ootomo, S
Hashizume, T
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04): : 1844 - 1855
[28] Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation
郑雪峰
范爽
陈永和
康迪
张建坤
王冲
默江辉
李亮
马晓华
张进成
郝跃
Chinese Physics B, 2015, 24 (02) : 380 - 385
[29] Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate
蒋鑫
李晨浩
羊硕雄
梁家豪
来龙坤
董青杨
黄威
刘新宇
罗卫军
Chinese Physics B, 2023, (03) : 513 - 520
[30] Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate
Jiang, Xin
Li, Chen-Hao
Yang, Shuo-Xiong
Liang, Jia-Hao
Lai, Long-Kun
Dong, Qing-Yang
Huang, Wei
Liu, Xin-Yu
Luo, Wei-Jun
CHINESE PHYSICS B, 2023, 32 (03)

← 1 2 3 4 5 →