Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure

被引：11

作者：

Chakraborty, Apurba ^{[1
]}

Ghosh, Saptarsi ^{[2
]}

Mukhopadhyay, Partha ^{[2
]}

Jana, Sanjay K. ^{[2
]}

Dinara, Syed Mukulika ^{[2
]}

Bag, Ankush ^{[2
]}

Mahata, Mihir K. ^{[2
]}

Kumar, Rahul ^{[2
]}

Das, Subhashis ^{[2
]}

Das, Palash ^{[2
]}

Biswas, Dhrubes ^{[1
,2
]}

机构：

[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, Adv Technol Dev Ctr, Kharagpur 721302, W Bengal, India

来源：

ELECTRONIC MATERIALS LETTERS | 2016年 / 12卷 / 02期

关键词：

HEMT; PA-MBE; reverse bias leakage current; FP emission; FN tunnelling; MOLECULAR-BEAM EPITAXY; GATE LEAKAGE; ALGAN/GAN; GAN;

D O I：

10.1007/s13391-015-5249-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure is investigated by current-voltage measurement in temperature range from 298 K to 423 K. The Higher electric field across the AlGaN barrier layer of AlGaN/InGaN/GaN double heterostructure due to higher polarization charge is found to be responsible for strong Fowler-Nordheim (FN) tunnelling in the electric field higher than 3.66 MV/cm. For electric field less than 3.56 MV/cm, the reverse bias leakage current is also found to follow the trap assisted Frenkel-Poole (FP) emission in low negative bias region. Analysis of reverse FP emission yielded the barrier height of trap energy level of 0.34 eV with respect to Fermi level.

引用

页码：232 / 236

页数：5

共 50 条

[1] Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure
Apurba Chakraborty
Saptarsi Ghosh
Partha Mukhopadhyay
Sanjay K. Jana
Syed Mukulika Dinara
Ankush Bag
Mihir K. Mahata
Rahul Kumar
Subhashis Das
Palash Das
Dhrubes Biswas
Electronic Materials Letters, 2016, 12 : 232 - 236
[2] STUDY ON THE CONDUCTION MECHANISM OF SURFACE LEAKAGE CURRENT FOR AlGaN/GaN HEMTS UNDER REVERSE GATE BIAS
Zheng, Xuefeng
Fan, Shuang
Kang, Di
Sun, Weiwei
Ma, Xiaohua
Hao, Yue
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[3] Mechanism for Forming Quantum-Size AlGaN/GaN/InGaN/GaN Heterostructure Layers
Vigdorovich E.N.
Russian Microelectronics, 2018, 47 (7) : 449 - 454
[4] Modeling of the Reverse Gate Leakage Current of AlGaN/GaN HEMTs
Cai, Feiyang
Xia, Guangrui
Li, Simon
Fu, Yue
PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2015, : 697 - 700
[5] On the resolution of the mechanism for reverse gate leakage in AlGaN/GaN HEMTs
Karmalkar, S
Satyan, N
Sathaiya, DM
IEEE ELECTRON DEVICE LETTERS, 2006, 27 (02) : 87 - 89
[6] The leakage current of the Schottky contact on the mesa edge of AlGaN/GaN heterostructure
Xu, Chuan
Wang, Jinyan
Chen, Hongwei
Xu, Fujun
Dong, Zhihua
Hao, Yilong
Wen, Cheng P.
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (11) : 942 - 944
[7] Drain-Bias-Dependent Study of Reverse Gate-Leakage Current in AlGaN/GaN HFETs
Singh, Iqbal Preet
Mojaver, Hassan Rahbardar
Valizadeh, Pouya
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (02) : 503 - 509
[8] Analytical Demonstration of Gate Leakage Current in AlGaN/GaN/InGaN/GaN DH-HEMT
Khan, Asif Abdullah
Fahim-Al-Fattah, Md.
Amin, Md. Ashiqul
Mohammad, Shimanto
Zia-Ul Hasan, Chowdhury
2017 2ND IEEE INTERNATIONAL CONFERENCE ON RECENT TRENDS IN ELECTRONICS, INFORMATION & COMMUNICATION TECHNOLOGY (RTEICT), 2017, : 392 - 395
[9] Analysis of Reverse Leakage Current and Breakdown Voltage in GaN and InGaN/GaN Schottky Barriers
Lu, Wei
Wang, Lingquan
Gu, Siyuan
Aplin, David P. R.
Estrada, Daniel M.
Yu, Paul K. L.
Asbeck, Peter M.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (07) : 1986 - 1994
[10] Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs
Chen, YongHe
Ma, XiaoHua
Chen, WeiWei
Hou, Bin
Zhang, JinCheng
Hao, Yue
AIP ADVANCES, 2015, 5 (09):

← 1 2 3 4 5 →