Morphological evolution of heteroepitaxial islands during Stranski-Krastonov growth

被引:2
|
作者
Liu, P.
Zhang, Y. W. [1 ]
机构
[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119260, Singapore
[2] Inst High Performance Comp, Singapore 117528, Singapore
关键词
epitaxial islands; surface diffusion; finite elements; self-assembly;
D O I
10.1016/j.ijsolstr.2006.09.013
中图分类号
O3 [力学];
学科分类号
08 ; 0801 ;
摘要
Three-dimensional finite element method is used to simulate the formation, self-assembly and shape transition of heteroepitaxial islands during Stranski-Krastonov growth. In the formulation, strain energy, surface energy, surface anisotropy and elastic anisotropy of a cubic lattice structure are taken into account. In the simulations, the SiGe/Si material system is used as a model system. An empirical surface energy as a function of surface orientation is proposed. The minimum energy surfaces are identified based on existing experimental observations. The simulation results show that the coupling of elastic energy relaxation, surface energy anisotropy and elastic anisotropy strongly influences the surface roughening morphology, self-assembly and shape transition of epitaxial islands, resulting in diverse evolution pathways. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1733 / 1744
页数:12
相关论文
共 50 条
  • [1] Coarsening kinetics of heteroepitaxial islands in nucleationless Stranski-Krastanov growth
    Liu, P
    Zhang, YW
    Lu, C
    PHYSICAL REVIEW B, 2003, 68 (03)
  • [2] Size selection of strained islands during Stranski-Krastanov growth
    Colin, Jerome
    THIN SOLID FILMS, 2013, 536 : 187 - 190
  • [3] Morphological transformation of InyGa1-yAs islands, fabricated by Stranski-Krastanov growth
    Lorke, A
    Blossey, R
    Garcia, JM
    Bichler, M
    Abstreiter, G
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 88 (2-3): : 225 - 229
  • [4] Influence of Direct Impingement of Atoms onto the Islands During the Stranski-Krastanow Growth
    Izhnin, Ihor I.
    Syvorotka, Thor, I
    Lozovoy, Kirill A.
    Kokhanenko, Andrey P.
    Voitsekhovskii, Alexander V.
    PROCEEDINGS OF THE 2018 IEEE 8TH INTERNATIONAL CONFERENCE NANOMATERIALS: APPLICATION & PROPERTIES (NAP-2018), 2018,
  • [5] Dislocation nucleation in SiGe nanoscale islands formed during heteroepitaxial growth
    V. A. Zinov’ev
    Optoelectronics, Instrumentation and Data Processing, 2009, 45 (4) : 332 - 336
  • [6] Dislocation Nucleation in SiGe Nanoscale Islands Formed during Heteroepitaxial Growth
    Zinov'ev, V. A.
    OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2009, 45 (04) : 332 - 336
  • [7] The nucleation of coherent semiconductor islands during the Stranski-Krastanov growth induced by elastic strains
    Kukushkin, SA
    Osipov, AV
    Schmitt, F
    Hess, P
    SEMICONDUCTORS, 2002, 36 (10) : 1097 - 1105
  • [8] Computer simulations of the Stranski-Krastanov growth of heteroepitaxial films with elastic anisotropy
    Liu, P
    Zhang, YW
    Lu, C
    SURFACE SCIENCE, 2003, 526 (03) : 375 - 382
  • [9] The nucleation of coherent semiconductor islands during the Stranski-Krastanov growth induced by elastic strains
    S. A. Kukushkin
    A. V. Osipov
    F. Schmitt
    P. Hess
    Semiconductors, 2002, 36 : 1097 - 1105
  • [10] Pit nucleation in the presence of three-dimensional islands during heteroepitaxial growth
    Bouville, M
    Millunchick, JM
    Falk, ML
    PHYSICAL REVIEW B, 2004, 70 (23) : 1 - 9