Microstructural studies of Fe-silicide films produced by metal vapor vacuum arc ion implantation of Fe into Si substrates

被引：2
|
作者：
Jin, S
Bender, H
Li, XN
Zhang, Z
Dong, C
Gong, ZX
Ma, TC
机构：
[1] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA
[2] DALIAN UNIV TECHNOL,NATL LAB MAT MODIFICAT LASER ION & ELECTRON BEAMS,DALIAN 116024,PEOPLES R CHINA
[3] DALIAN UNIV TECHNOL,DEPT MAT SCI & ENGN,DALIAN 116024,PEOPLES R CHINA
来源：
APPLIED SURFACE SCIENCE | 1997年 / 115卷 / 02期
关键词：
D O I：
10.1016/S0169-4332(97)80193-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Iron-silicide films have been formed by metal vapor vacuum are (Mevva) ion implantation of iron into (111) and (100) oriented silicon wafers. In the as-implanted samples with a dose of 1 x 10(17) ions/cm(2), metastable gamma-FeSi2 is the dominant phase accompanied by a small fraction of the CsCl-derived defect phase Fe1-xSi. The silicide grains form a surface layer on (111) silicon, whereas they are embedded in(100) silicon substrate at a depth of 30 nm, In the samples with a higher dose of 4 x 10(17) ions/cm(2), a primitive orthorhombic FeSi2 phase is formed, Some grains with this new structure contain stacking faults which are lying on (100) planes.
引用
收藏
页码：116 / 123
页数：8
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