Electrical characteristics of a high rectification ratio organic Schottky diode based on methyl red

被引：0
|
作者：
Ahmad, Z. [1 ]
Sayyad, M. H. [1 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23640, Nwfp, Pakistan
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2009年 / 3卷 / 05期
关键词：
Methyl-red; Schottky diode; High rectification ratio; CELL; PARAMETERS; VOLTAGE;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, the study of electrical properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) characteristics is reported. The I-V characteristics of the Schottky diode showed the very high rectifying behavior. The rectification ratio was found in order of 10(5). The values of ideality factor n and barrier height phi(b) of Au/methyl-red/Ag Schottky diode were calculated. The average values of n and phi(b) were found about 1.58 and 0.24 V, respectively. The effect of series resistance was also investigated. The average value of R-S values was calculated about 1.1 k Omega.
引用
收藏
页码：509 / 512
页数：4
相关论文
共 50 条
  • [21] Temperature dependent electrical characterization of organic Schottky diode based on thick MgPc films
    Singh, J.
    Sharma, R. K.
    Sule, U. S.
    Goutam, U. K.
    Gupta, Jagannath
    Gadkari, S. C.
    MATERIALS RESEARCH EXPRESS, 2017, 4 (07):
  • [22] A high rectification ratio nanofluidic diode induced by an "ion pool"
    Liu, Qingqing
    Liu, You
    Lu, Bingxin
    Wang, Yuting
    Xu, Yanglei
    Zhai, Jin
    Fan, Xia
    RSC ADVANCES, 2020, 10 (13) : 7377 - 7383
  • [23] Schottky diode based on composite organic semiconductors
    Gupta, RK
    Singh, RA
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2004, 7 (1-2) : 83 - 87
  • [24] Co-design of GaN based Schottky Barrier Diode and Rectification Sensor with High Efficiency and Sensitivity
    Li, Yang
    Yang, Jiayi
    Pu, Taofei
    Ao, Jinping
    2021 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP), 2021, : 74 - 76
  • [25] A 0.5-μm-thick polycrystalline silicon Schottky diode with rectification ratio of 106
    Guliants, EA
    Ji, CH
    Song, YJ
    Anderson, WA
    APPLIED PHYSICS LETTERS, 2002, 80 (08) : 1474 - 1476
  • [26] The electrical characteristics of Ni/n-GaSb Schottky diode
    Huang, Wen-Chang
    Lin, Tien-Chai
    Horng, Chia-Tsung
    Li, Yu-Huang
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (02) : 418 - 423
  • [27] Electrical and photoelectrical characteristics of Au/GaN/GaAs Schottky diode
    Rabehi, A.
    Amrani, M.
    Benamara, Z.
    Akkal, B.
    Kacha, A. H.
    OPTIK, 2016, 127 (16): : 6412 - 6418
  • [28] Colossal Increase in Electric Current and High Rectification Ratio in a Photoconducting, Self-Cleaning, and Luminescent Schottky Barrier NMOF Diode
    Roy, Syamantak
    Das, Mrinmay
    Bandyopadhyay, Arkamita
    Pati, Swapan Kumar
    Ray, Partha Pratim
    Maji, Tapas Kumar
    JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 121 (42): : 23803 - 23810
  • [29] Effect of an organic compound (Methyl Red) interfacial layer on the calculation of characteristic parameters of an Al/Methyl Red/p-Si sandwich Schottky barrier diode
    Kilicoglu, Tahsin
    THIN SOLID FILMS, 2008, 516 (06) : 967 - 970
  • [30] Analysis of electrical characteristics of Er/p-InP Schottky diode at high temperature range
    Kumar, A. Ashok
    Rao, L. Dasaradha
    Reddy, V. Rajagopal
    Choi, Chel-Jong
    CURRENT APPLIED PHYSICS, 2013, 13 (06) : 975 - 980
12345