Electrical characteristics of a high rectification ratio organic Schottky diode based on methyl red

被引：0
|
作者：
Ahmad, Z. [1 ]
Sayyad, M. H. [1 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Engn Sci, Topi 23640, Nwfp, Pakistan
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2009年 / 3卷 / 05期
关键词：
Methyl-red; Schottky diode; High rectification ratio; CELL; PARAMETERS; VOLTAGE;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, the study of electrical properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) characteristics is reported. The I-V characteristics of the Schottky diode showed the very high rectifying behavior. The rectification ratio was found in order of 10(5). The values of ideality factor n and barrier height phi(b) of Au/methyl-red/Ag Schottky diode were calculated. The average values of n and phi(b) were found about 1.58 and 0.24 V, respectively. The effect of series resistance was also investigated. The average value of R-S values was calculated about 1.1 k Omega.
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页码：509 / 512
页数：4
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