In-situ observation of instability of a crystal-melt interface during the directional growth of pure antimony

被引:6
|
作者
Shiga, Keiji [1 ]
Billaut, Leo [1 ]
Maeda, Kensaku [1 ]
Morito, Haruhiko [1 ]
Fujiwara, Kozo [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan
来源
AIP ADVANCES | 2018年 / 8卷 / 07期
基金
日本学术振兴会;
关键词
SILICON; SOLIDIFICATION; ALLOY; PLANAR;
D O I
10.1063/1.5038377
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The instability of a crystal-melt interface during the directional growth of pure antimony was studied using an in-situ observation technique. The morphology of the crystal-melt interface was planar at a low growth velocity, while the interface transitioned to wavy and then zig-zag faceted at 60 mu m s(-1). Calculating the thermal field at the crystal-melt interface using a diffusion equation showed that the temperature gradient in the melt becomes negative when the moving velocity of the interface is higher than 52 mu m s(-1). These results demonstrate that perturbations introduced into the planar interface are amplified by a negative temperature gradient and these amplified perturbations result in zig-zag facets. (C) 2018 Author(s).
引用
收藏
页数:5
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