Current matching using CdSe quantum dots to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells

被引:14
|
作者
Lee, Ya-Ju [1 ]
Yao, Yung-Chi [1 ]
Tsai, Meng-Tsan [2 ]
Liu, An-Fan [1 ]
Yang, Min-De [3 ]
Lai, Jiun-Tsuen [3 ]
机构
[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei 116, Taiwan
[2] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan
[3] WIN Semicond Corp, Tao Yuan 333, Taiwan
来源
OPTICS EXPRESS | 2013年 / 21卷 / 22期
关键词
SLANTED ITO FILM; CARRIER MULTIPLICATION; PERFORMANCE; ABSORPTION;
D O I
10.1364/OE.21.00A953
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A III-V multi-junction tandem solar cell is the most efficient photovoltaic structure that offers an extremely high power conversion efficiency. Current mismatching between each subcell of the device, however, is a significant challenge that causes the experimental value of the power conversion efficiency to deviate from the theoretical value. In this work, we explore a promising strategy using CdSe quantum dots (QDs) to enhance the photocurrent of the limited subcell to match with those of the other subcells and to enhance the power conversion efficiency of InGaP/GaAs/Ge tandem solar cells. The underlying mechanism of the enhancement can be attributed to the QD's unique capacity for photon conversion that tailors the incident spectrum of solar light; the enhanced efficiency of the device is therefore strongly dependent on the QD's dimensions. As a result, by appropriately selecting and spreading 7 mg/mL of CdSe QDs with diameters of 4.2 nm upon the InGaP/GaAs/Ge solar cell, the power conversion efficiency shows an enhancement of 10.39% compared to the cell's counterpart without integrating CdSe QDs. (C) 2013 Optical Society of America
引用
收藏
页码:A953 / A963
页数:11
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