Band alignment between 4H-SiC and atomic-layer-deposited ZrO2 determined by X-ray photoelectron spectroscopy

被引：9
|
作者：
Ye, Gang [1 ]
Wang, Hong [1 ,2 ]
Ji, Rong [3 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] CNRS Int NTU THALES Res Alliances UMI 3288, Singapore 637553, Singapore
[3] ASTAR, Data Storage Inst, Singapore 117608, Singapore
来源：
APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
POWER MOSFETS; INTERFACES; TECHNOLOGIES; OFFSETS; DEVICES;
D O I：
10.7567/APEX.8.091302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The band alignment between 4H-SiC and atomic-layer-deposited (ALD) ZrO2 was investigated by using X-ray photoelectron spectroscopy (XPS). The valence band of ZrO2 was found to be 0.52 +/- 0.1 eV below that of 4H-SiC. Considering the band gap of 5.6 and 3.26 eV for ALD-ZrO2 and 4H-SiC, respectively, a type-I heterojunction with a conduction band discontinuity (Delta E-C) of 1.82 +/- 0.1 eV is obtained. The results suggest that ZrO2 could be a good high-dielectric-constant insulator for n-type carriers in SiC-based devices. (C) 2015 The Japan Society of Applied Physics
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页数：3
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