Band alignment between 4H-SiC and atomic-layer-deposited ZrO2 determined by X-ray photoelectron spectroscopy

被引：9

作者：

Ye, Gang ^{[1
]}

Wang, Hong ^{[1
,2
]}

Ji, Rong ^{[3
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] CNRS Int NTU THALES Res Alliances UMI 3288, Singapore 637553, Singapore

[3] ASTAR, Data Storage Inst, Singapore 117608, Singapore

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

POWER MOSFETS; INTERFACES; TECHNOLOGIES; OFFSETS; DEVICES;

D O I：

10.7567/APEX.8.091302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The band alignment between 4H-SiC and atomic-layer-deposited (ALD) ZrO2 was investigated by using X-ray photoelectron spectroscopy (XPS). The valence band of ZrO2 was found to be 0.52 +/- 0.1 eV below that of 4H-SiC. Considering the band gap of 5.6 and 3.26 eV for ALD-ZrO2 and 4H-SiC, respectively, a type-I heterojunction with a conduction band discontinuity (Delta E-C) of 1.82 +/- 0.1 eV is obtained. The results suggest that ZrO2 could be a good high-dielectric-constant insulator for n-type carriers in SiC-based devices. (C) 2015 The Japan Society of Applied Physics

引用

页数：3

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