Effects of BCl3 addition to Cl2 gas on etching characteristics of GaN at high temperature

被引：11

作者：

Tanide, Atsushi ^{[1
]}

Nakamura, Shohei ^{[1
]}

Horikoshi, Akira ^{[1
]}

Takatsuji, Shigeru ^{[1
]}

Kohno, Motohiro ^{[1
]}

Kinose, Kazuo ^{[1
]}

Nadahara, Soichi ^{[1
]}

Ishikawa, Kenji ^{[2
]}

Sekine, Makoto ^{[2
]}

Hori, Masaru ^{[2
]}

机构：

[1] SCREEN Holdings Co Ltd, Fushimi Ku, 322 Furukawa Cho, Kyoto 6128486, Japan

[2] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2019年 / 37卷 / 02期

关键词：

INDUCED DAMAGE; THIN-FILMS; PLASMA; CL-2/BCL3; FABRICATION; RECOVERY;

D O I：

10.1116/1.5082345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gallium nitride films were etched at 400 degrees C and 20 Pa with a radio-frequency-generated Cl-2-BCl3 mixed plasma. While dog-legged profiles were obtained by plasma etching using pure Cl-2, straight sidewall shapes were achieved through BCl3 gas addition into the Cl-2 plasma by suppressing the plasma-induced damage on the etched surface. Etching by-products containing boron on the etched surface affected the etch rate. Smooth etched profiles were obtained by controlling the redeposition of by-products of boron and chlorine compounds, particularly for substrate temperatures above 230 degrees C. Published by the AVS.

引用

页数：6

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