A Study on Metal-Insulator-Silicon Hydrogen Sensor with LaTiON as Gate Insulator

被引：0

作者：

Chen, Gang ^{[1
]}

Yu, Jerry ^{[1
]}

Lai, P. T. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS SCIENCE | 2012年 / 25卷

关键词：

Schottky-diode; hydrogen sensor; silicon; gate insulator; LaTiON;

D O I：

10.1016/j.phpro.2012.03.048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amongst the many types of semiconductor hydrogen sensors currently studied, Schottky-diodes are preferable as they are simple to fabricate and exhibit high sensitivities and fast response times. To enhance the sensor's performance, a gate insulator is deposited in order to minimize interfacial diffusion between the electrode and the substrate. In this work, we present a novel MIS Schottky-diode hydrogen sensor with LaTiON as gate insulator. The hydrogen-sensing properties (sensitivity, barrier height variation) were examined from room temperature (RT) to 150 degrees C and its sensitivity was found to reach 2.5 at 100 degrees C. Moreover, the hydrogen reaction kinetics were studied and these results showed that the sensor was very sensitive to hydrogen ambient. (C) 2011 Published by Elsevier B.V. Selection and/or peer-review under responsibility of Garry Lee

引用

页码：50 / 55

页数：6

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