Irreversible increase of the low-temperature paramagnetism in GaAs substrates

被引：4
|
作者：
Ney, A [1 ]
Jan, G [1 ]
Parkin, SSP [1 ]
机构：
[1] IBM Res Div, Almaden Res Ctr, San Jose, CA 95120 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 04期
关键词：
D O I：
10.1063/1.2170948
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The magnetic susceptibility of undoped GaAs substrates is measured from 2 to 300 K. It comprises two types of temperature-dependent net-paramagnetic contributions. One is a Van Vleck-type paramagnetic contribution which scales inversely with the band gap of the semiconductor and thus increases up to room temperature. The other resembles a Langevin-type paramagnetism which sets in only at low temperatures after certain thermal cycling procedures. (c) 2006 American Institute of Physics.
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页数：4
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