AlGaN/GaN Heterojunction Bipolar Transistors With High Current Gain and Low Specific On-Resistance

被引：5
|
作者：
Zhang, Lian [1 ]
Wang, Xinyuan [1 ,2 ]
Zeng, Jianping [3 ]
Jia, Lifang [1 ]
Cheng, Zhe [1 ]
Ai, Yujie [1 ,4 ]
Liu, Zhe [1 ,2 ]
Tan, Wei [3 ]
Zhang, Yun [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610299, Peoples R China
[4] Lishui Zhongke Semicond Mat Co Ltd, Lishui 323000, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 12期
关键词：
Avalanche breakdown; current gain; GaN; heterojunction bipolar transistor (HBT); specific ON-resistance; GAN; TRANSPORT; DENSITY;
D O I：
10.1109/TED.2022.3217245
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
N-p-n AlGaN/GaN heterojunction bipolar transistors (HBTs) on sapphire substrateswith high current gain beta of 129, low specific ON-resistance (R-ON,R-sp) of 0.28m Omega center dot cm(2) and high current density J(C) of similar to 15 kA/cm2 (if normalized to emitter area, R-ON,R-sp similar to 0.15 m Omega.m(2) and J(C) similar to 28.4 kA/cm(2)) have been demonstrated. The analysis of component of R-ON,R-sp yields the collector resistance is similar to 5.2% of the total R-ON,R-sp, showing the low ON-resistance advantage of GaN HBTs. The open-base avalanche breakdown voltage (BVCEO) is similar to 160 V. High-temperature performance of GaN HBT is also evaluated. The R-ON,R-sp is reduced as temperature increasing in the range of 25 degrees C-100 degrees C due to enhanced hole concentration in the base layer. The cutoff frequency (f(T)) of greater than 4 GHz is determined at V-CE = 9 V. These results dominate that GaN HBTs have been anticipated to become a new technology for next-generation power switches and RF power amplifier circuit.
引用
收藏
页码：6633 / 6636
页数：4
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