A K-Band subharmonic down-converter in a GaAs metamorphic HEMT process

被引：0
|
作者：
Matinpour, B [1 ]
Lal, N [1 ]
Laskar, J [1 ]
Leoni, RE [1 ]
Whelan, CS [1 ]
机构：
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Yamacraw Design Ctr, Atlanta, GA 30332 USA
来源：
2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present the first implementation of a K-band subharmonic down-converter fabricated in a 0.18-mum GaAs Metamorphic High Electron Mobility Transistor (MHEMT) process. The low noise and high gain characteristics of the MHEMTs at K-band allow for the integration of a single-stage amplifier with a subharmonic mixer resulting in low-power broadband performance. The subharmonic mixer exhibits a conversion loss of 13 dB and IIP3 of +8 dBm from 23 to 30 GHz. With the addition of the amplifier, the down-converter exhibits a conversion loss of 3 dB, noise figure of 5 dB, and IIP3 of -5 dBm from 26 to 30 GHz. The single-stage amplifier exhibits InP-like performance with gain of 11 dB, NF of 1.5 dB, and dc power consumption of 15 mW.
引用
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页码：1337 / 1339
页数：3
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