Analysis of Dispersion in Intermodulation Distortion in GaN HEMT Devices

被引：0
|
作者：
Albahrani, Sayed A. [1 ]
Parker, Anthony E. [1 ]
Gutta, Venkata [1 ]
机构：
[1] Macquarie Univ, Dept Phys & Engn, Sydney, NSW 2109, Australia
来源：
2010 ASIA-PACIFIC MICROWAVE CONFERENCE | 2010年
基金：
澳大利亚研究理事会;
关键词：
Dispersion; Intermodulation; Charge trapping; Self-heating; GaN HEMT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The considerable variation in intermodulation across wide bandwidths due to trapping and self-heating mechanisms are considered here as a dispersion of linearity that is bias dependent. This is of interest to designers because the dispersion gives intermodulation a strong dependence on center and spacing of test frequencies, which requires an interpretation of inter modulation measurements and specifications across the whole signal bandwidth. Detailed intermodulation distortion and pulse measurements were performed for this study. New self-heating and trapping models are used to characterize intermodulation distortion and pulse measurements.
引用
收藏
页码：398 / 401
页数：4
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