Flash memory technology development

被引：0
|
作者：
Jun, Z [1 ]
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
来源：
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年
关键词：
NVSM; Flash Memory;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
As a new non-volatile semiconductor memory, FLASH was introduced by Masuoka at 1984. FLASH has non-volatility, in system rewritability, high density, low-cost and good reliability advantages. It is widely used on file storage, smart IC card, PLD, mobile phone, digital camera, DVD player and so on. This paper describes its programming, cell structure, FLASH array and reliability.
引用
收藏
页码：189 / 194
页数：6
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