Thick film Au-gate field-effect devices sensitive to NO2

被引：15
|
作者：
Filippini, D
Fraigi, L
Aragón, R
Weimar, U
机构：
[1] Univ Tubingen, Inst Phys & Theoret Chem, D-72076 Tubingen, Germany
[2] Natl Inst Ind Technol, CITEI, Lab Sensores, RA-1650 San Martin, Argentina
[3] Univ Buenos Aires, Fac Ingn, Lab Peliculas Delgadas, RA-1063 Buenos Aires, Argentina
[4] CITEFA, CONICET, PRINSO, RA-1063 Buenos Aires, Argentina
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2002年 / 81卷 / 2-3期
关键词：
nitrogen dioxide; thick films; field effect; chemical gas sensors;
D O I：
10.1016/S0925-4005(01)00969-8
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Screen printed thick film gold gate MOS capacitors are selectively sensitive to the presence of NO2 in air, Metallo-organic gold inks produce open gate structures, with positive flat-band-voltage shifts of 2.72 mV/ppm at 140 ppm of NO2 in air, comparable to PVD deposited thin film devices. Standard gold pastes are denser, coarser grained thick films of alloyed composition, which reverse the polarity of the flat-band-voltage shift. No cross sensitivity to H-2 or NO is apparent. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：296 / 300
页数：5
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