Temperature effect on AlN/SiO2 gate pH-Ion-sensitive field-effect transistor devices

被引：0

作者：

Chiang, Jung-Lung ^{[1
,2
]}

Chen, Ying-Chung ^{[1
]}

Chou, Jung-Chuan ^{[1
,2
,3
]}

Cheng, Chien-Chuan ^{[2
]}

机构：

[1] Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan

[2] Institute of Electronic and Information Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin 640, Taiwan

[3] Department of Electronic Engineering, De-Lin Institute of Technology, Tucheng, Taipei 236, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 2 A期

关键词：

Current voltage characteristics - Electrodes - Electrolytes - pH effects - Readout systems - Semiconducting aluminum compounds - Semiconducting silicon compounds - Solutions - Sputtering - Substrates - Thermal effects - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The temperature effect was investigated for the ion-sensitive field-effect transistor (ISFET) devices with an aluminum nitride (AlN) gate insulator. The AlN thin film was prepared on the reference electrode/electrolyte/AlN thin film/SiO2/p-Si substrate structure by radio frequency sputtering technology. The current-voltage characteristics of the AlN/SiO2 gate ISFET were obtained at various temperatures and the pH sensitivities were calculated in the buffer solutions range of pH = 1-11. The experimental results show that the pH sensitivities were 48.38, 52.5, 53.83, 54.46, 56.0, 56.36, and 57.25mV/pH for 5-65 ± 0.1°C (step 10°C). The temperature coefficient of sensitivity (T.C.S.) was determined to be 0.130 mV/pH°C. In addition, the constant voltage constant current (CVCC) readout circuit was used to measure the gate versus source output voltage in various pH buffer solutions at different ambient temperatures, which reveals the same temperature-dependent characteristics of the ISFET.

引用

页码：541 / 545

共 50 条

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