Local critical dimension variation from shot-noise related line edge roughness

被引：47
|
作者：
Kruit, P
Steenbrink, S
机构：
[1] Delft Univ Technol, NL-2628 CJ Delft, Netherlands
[2] MAPPER Lithog, NL-2628 CJ Delft, Netherlands
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 06期
关键词：
D O I：
10.1116/1.2127941
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Shot noise effects are important to take into account both in the design of resists for lithography and in the design of lithography tools. The statistics of electron or photon arrival gives rise to dose variations, which translate to variations in the size of written features. It is possible to model the shot noise effects in an analytical equation, which shows the influence of all relevant parameters. The sequence of subsequent events in the resist: Secondary electron creation, acid generation, and acid diffusion are incorporated in the model. The model then allows the evaluation of the minimum resist sensitivity necessary for a certain required critical dimension control. (c) 2005 American Vacuum Society.
引用
收藏
页码：3033 / 3036
页数：4
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