Silicon-based field-effect devices for (bio-)chemical sensing

被引:0
|
作者
Schoening, Michael J. [1 ,2 ]
Poghossian, Arshak [1 ,2 ]
机构
[1] Aachen Univ Appl Sci, INB, Julich Campus, D-52428 Julich, Germany
[2] Res Ctr, Inst Bio & Nanosyst, D-52425 Julich, Germany
关键词
D O I
10.1109/ASDAM.2008.4743345
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The coupling of semiconductor field-effect devices (FEDs) together with chemical and biological recognition elements, like functional intelligent materials, biomolecules and living cells, represents an attractive platform for creating various bio- and chemical sensors, multi-parameter analysis systems and bio-chips. This paper is focussing on recent developments and current research activities in the field of (bio-)chemically modified FEDs at the Institute of Nano- and Biotechnologies, scaling down from capacitive EIS (electrolyte-insulator-semiconductor) sensors and LAPS (light-addressable potentiometric sensor) to ISFETs (ion-sensitive field-effect transistor). Selected examples of application of FEDs are presented. With the aim of future development of nano-devices for bio- and chemical sensing, the possibility of a simple preparation of self-aligned nanostructures by using conventional photolithography and pattern-size reduction technique as well as nanoparticle-based field-effect sensors will be discussed, too.
引用
收藏
页码:31 / +
页数:3
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