Ultra-Low Power and Ultra-Low Voltage Devices and Circuits for IoT Applications

被引：0

作者：

Hiramoto, T. ^{[1
]}

Takeuchi, K. ^{[1
]}

Mizutani, T. ^{[1
]}

Ueda, A. ^{[1
]}

Saraya, T. ^{[1
]}

Kobayashi, M. ^{[1
]}

Yamamoto, Y. ^{[2
]}

Makiyama, H. ^{[2
]}

Yamashita, T. ^{[2
]}

Oda, H. ^{[2
]}

Kamohara, S. ^{[2
]}

Sugii, N. ^{[2
]}

Yamaguchi, Y. ^{[2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo 1138654, Japan

[2] Low Power Elect Assoc & Project LEAP, Tsukuba, Ibaraki, Japan

来源：

2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports new device trends of ultra-low power, ultra-low leakage, and ultra-low voltage for IoT applications. The SOTB technology achieves subthreshold leakage as low as 0.2pA/mu m. Some device/circuit tricks for non-volatility and ultra-low voltage operation are reviewed.

引用

页码：146 / 147

页数：2

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