Low resistance contacts to p-type GaN

被引：44
|
作者：
Kim, T
Khim, J
Chae, S
Kim, T
机构：
来源：
GALLIUM NITRIDE AND RELATED MATERIALS II | 1997年 / 468卷
关键词：
D O I：
10.1557/PROC-468-427
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the low resistance ohmic contacts to p-GaN using a Pd/Au bimetal scheme. A specific contact resistivity of 9.1 x 10(-3) Omega . cm(2) was obtained after annealing. The metallization was e-beam evaporated on 2 mu m-thick p-GaN (similar to 9 x 10(16)/cm(3)) layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The comparison with other contacts showed that the contact resistivity of the Pd/Au contacts was at least one order smaller than those of Pt/Au and Ni/Au contacts.
引用
收藏
页码：427 / 430
页数：4
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