Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

被引：156
|
作者：
Jang, JS [1 ]
Chang, IS
Kim, HK
Seong, TY
Lee, SH
Park, SJ
机构：
[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 506712, South Korea
[2] Kwangju Inst Sci & Technol, Ctr Elect Mat Res, Kwangju 506712, South Korea
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期
关键词：
D O I：
10.1063/1.123954
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3X10(17) cm(-3)). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1X10(-4) Ohm cm(2) when annealed at 350 degrees C for 1 min in a flowing N-2 atmosphere. (C) 1999 American Institute of Physics. [S0003-6951(99)03101-0].
引用
收藏
页码：70 / 72
页数：3
相关论文
共 50 条
  • [1] Low-resistance ohmic contacts to p-type GaN
    Ho, JK
    Jong, CS
    Chiu, CC
    Huang, CN
    Chen, CY
    Shih, KK
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (09) : 1275 - 1277
  • [2] Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization
    Chu, CF
    Yu, CC
    Wang, YK
    Tsai, JY
    Lai, FI
    Wang, SC
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (21) : 3423 - 3425
  • [3] Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization
    [J]. 2000, American Institute of Physics Inc. (77)
  • [4] Low-resistance ohmic contacts to p-type GaN
    Li, YL
    Schubert, EF
    Graff, JW
    Osinsky, A
    Schaff, WF
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (19) : 2728 - 2730
  • [5] Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
    Ho, JK
    Jong, CS
    Chiu, CC
    Huang, CN
    Shih, KK
    Chen, LC
    Chen, FR
    Kai, JJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) : 4491 - 4497
  • [6] Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN
    Kim, HK
    Seong, TY
    Adesida, I
    Tang, CW
    Lau, KM
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (10) : 1710 - 1712
  • [7] Electrical and structural properties of low-resistance Pt/Ag/Au ohmic contacts to p-type GaN
    Reddy, VR
    Reddy, NR
    Choi, CJ
    [J]. SOLID-STATE ELECTRONICS, 2005, 49 (07) : 1213 - 1216
  • [8] Low resistance Ti/Pt/Au ohmic contacts to p-type GaN
    Zhou, L
    Lanford, W
    Ping, AT
    Adesida, I
    Yang, JW
    Khan, A
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (23) : 3451 - 3453
  • [9] Oxidized Ni/Pt and Ni/Au ohmic contacts to p-type GaN
    Chen, LC
    Ho, JK
    Jong, CS
    Chiu, CC
    Shih, KK
    Chen, FR
    Kai, JJ
    Chang, L
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3703 - 3705
  • [10] Low-resistance Ta/Ti ohmic contacts for p-type GaN
    Suzuki, M
    Kawakami, T
    Arai, T
    Kobayashi, S
    Koide, Y
    Uemura, T
    Shibata, N
    Murakami, M
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (02) : 275 - 277
12345