Photoluminescence Analysis of CdS/CIGS Interfaces in CIGS Solar Cells

被引:12
|
作者
Chen, Sheng-Hui [1 ]
Lin, Wei-Ting [1 ]
Chan, Shih-Hao [1 ]
Tseng, Shao-Ze [2 ]
Kuo, Chien-Cheng [1 ,3 ]
Hu, Sung-Cheng [4 ]
Peng, Wan-Hsuan [4 ]
Lu, Yung-Tien [4 ]
机构
[1] Natl Cent Univ, Dept Opt & Photon, Chungli 32001, Taiwan
[2] Natl Cent Univ, Opt Sci Ctr, Chungli 32001, Taiwan
[3] Natl Cent Univ, Grad Inst Energy Engn, Chungli 32001, Taiwan
[4] Natl Chung Shan Inst Sci & Technol, Chem Syst Res Div, Lungtan 32599, Taiwan
关键词
CU(IN; GA)SE-2; THIN-FILMS;
D O I
10.1149/2.0041509jss
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, the element diffusion behavior and defect states at the CdS/CIGS interface and their effect on solar cell performance were investigated after post-annealing treatment in an air environment at 150 degrees C and 200 degrees C, respectively. The results showed that the defect states (V-Se and V-Cu) were passivated by the elements of O, S, and Cd forming a new compound CIGSSe, which led to an increase in the band-gap on the CIGS surface and a high carrier concentration at the p-n junction. There was an improvement in the photovoltaic performance of the solar cells from 3.71% to 7.25% through post-annealing treatment at 200 degrees C for 30 min. (C) 2015 The Electrochemical Society. All rights reserved.
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页码:P347 / P350
页数:4
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