Photoluminescence Analysis of CdS/CIGS Interfaces in CIGS Solar Cells

被引：12

作者：

Chen, Sheng-Hui ^{[1
]}

Lin, Wei-Ting ^{[1
]}

Chan, Shih-Hao ^{[1
]}

Tseng, Shao-Ze ^{[2
]}

Kuo, Chien-Cheng ^{[1
,3
]}

Hu, Sung-Cheng ^{[4
]}

Peng, Wan-Hsuan ^{[4
]}

Lu, Yung-Tien ^{[4
]}

机构：

[1] Natl Cent Univ, Dept Opt & Photon, Chungli 32001, Taiwan

[2] Natl Cent Univ, Opt Sci Ctr, Chungli 32001, Taiwan

[3] Natl Cent Univ, Grad Inst Energy Engn, Chungli 32001, Taiwan

[4] Natl Chung Shan Inst Sci & Technol, Chem Syst Res Div, Lungtan 32599, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2015年 / 4卷 / 09期

关键词：

CU(IN; GA)SE-2; THIN-FILMS;

D O I：

10.1149/2.0041509jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, the element diffusion behavior and defect states at the CdS/CIGS interface and their effect on solar cell performance were investigated after post-annealing treatment in an air environment at 150 degrees C and 200 degrees C, respectively. The results showed that the defect states (V-Se and V-Cu) were passivated by the elements of O, S, and Cd forming a new compound CIGSSe, which led to an increase in the band-gap on the CIGS surface and a high carrier concentration at the p-n junction. There was an improvement in the photovoltaic performance of the solar cells from 3.71% to 7.25% through post-annealing treatment at 200 degrees C for 30 min. (C) 2015 The Electrochemical Society. All rights reserved.

引用

下载

页码：P347 / P350

页数：4

共 50 条

[1] EXCESS DEFECTS AT THE CdS/CIGS INTERFACE SOLAR CELLS
Touafek, N.
Mahamdi, R.
CHALCOGENIDE LETTERS, 2014, 11 (11): : 589 - 596
[2] FT-PL analysis of CIGS/CdS/ZnO interfaces
Webb, JD
Keyes, BM
Ramanathan, K
Dippo, P
Niles, DW
Noufi, R
NREL/SNL PHOTOVOLTAICS PROGRAM REVIEW - PROCEEDINGS OF THE 14TH CONFERENCE: A JOINT MEETING, 1997, (394): : 573 - 578
[3] TEM and XPS studies on CdS/CIGS interfaces
Han, Jun-feng
Liao, Cheng
Cha, Li-mei
Jiang, Tao
Xie, Hua-mu
Zhao, Kui
Besland, M. -P.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2014, 75 (12) : 1279 - 1283
[4] Impact of CIGS, CdS and i - ZnO film thickness, temperature on efficiency enhancement of CIGS solar cells
Lakshmi, Deepa B.
Rajendran, R. S.
Suthakorn, Jackrit
Pillai, Branesh M.
JOURNAL OF CERAMIC PROCESSING RESEARCH, 2022, 23 (06): : 878 - 883
[5] Electrical characteristics study of heterojunction solar cells CdS/CIGS
Amar, H.
Amir, M.
Ghodbane, H.
Babes, B.
Kateb, M. N.
Zidane, M. A.
Rauane, A.
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2021, 24 (04) : 457 - 465
[6] Numerical Modelling of CIGS/CdS solar cell
Devi, Nisha
Aziz, Anver
Datta, Shouvik
2ND INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC-2017), 2018, 1953
[7] A comparative study of CIGS solar cells based on Zn (O, S) buffer layers and CIGS solar cells based on CdS buffer layers
Chadel, A.
Benyoucef, B.
Chadel, M.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2015, 9 (5-6): : 653 - 656
[8] Optimization of CdS Buffer Layer for High Efficiency CIGS Solar Cells
Kim, Donguk
Jang, Yong-Jun
Jung, Ho-Sung
Kim, Minha
Baek, Dohyun
Yi, Junsin
Lee, Jaehyeong
Choi, Youngkwan
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (05) : 5074 - 5077
[9] Chemical bath deposition of CdS buffer layer for CIGS solar cells
Hashimoto, Y
Kohara, N
Negami, T
Nishitani, N
Wada, T
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1998, 50 (1-4) : 71 - 77
[10] Effects of the CdS nanowire layer on the photocurrent generation in CIGS solar cells
Movla, Hossein
Rafi, Amin Mohammadalizad
Rafi, Nima Mohammadalizad
OPTIK, 2015, 126 (24): : 5088 - 5091

← 1 2 3 4 5 →