Delayed Core-Level Photoemission from the van der Waals Crystal WSe2

被引:0
|
作者
Merschjohann, F. [1 ]
Neb, S. [1 ]
Bartz, P. [1 ]
Hensen, M. [1 ]
Strueber, C. [1 ]
Fiechter, S. [2 ]
Mueller, N. [1 ]
Pfeiffer, W. [1 ]
Heinzmann, U. [1 ]
机构
[1] Univ Bielefeld, Fak Phys, D-33615 Bielefeld, Germany
[2] Helmholtz Zentrum Berlin, Inst Solare Brennstoffe, D-14109 Berlin, Germany
来源
ULTRAFAST PHENOMENA XIX | 2015年 / 162卷
关键词
D O I
10.1007/978-3-319-13242-6_17
中图分类号
O59 [应用物理学];
学科分类号
摘要
Attosecond time-resolved XUV streaking experiments are reported for cleaved WSe2 surfaces. The photoemission from Se 3d and W 4f core levels occurs delayed by 50 as with respect to the valence band emission.
引用
收藏
页码:68 / 71
页数:4
相关论文
共 50 条
  • [41] Complementary tunneling transistors based on WSe2/SnS2 van der Waals heterostructure
    Rundong Jia
    Liang Chen
    Qianqian Huang
    Ru Huang
    Science China Information Sciences, 2020, 63
  • [42] Positively Charged Biexcitons in Monolayer WSe2 in Type-I GaSe/WSe2 van der Waals Heterostructures: Implications for the Biexciton Laser
    Chen, Jiajun
    Shan, Yabing
    Chen, Jing
    Chen, Chen
    Wang, Huishan
    Han, Jinkun
    Yue, Xiaofei
    Xu, Mingsheng
    Wang, Haomin
    Bao, Wenzhong
    Hu, Laigui
    Liu, Ran
    Qiu, Zhi-Jun
    Cong, Chunxiao
    ACS APPLIED NANO MATERIALS, 2022, 5 (08) : 10628 - 10635
  • [43] Core-level photoemission from graphite
    Prince, KC
    Ulrych, I
    Peloi, M
    Ressel, B
    Cháb, V
    Crotti, C
    Comicioli, C
    PHYSICAL REVIEW B, 2000, 62 (11): : 6866 - 6868
  • [44] Electric-field tunable electronic structure in WSe2/arsenene van der Waals heterostructure
    Zhang, Fang
    Li, Wei
    Dai, Xianqi
    SUPERLATTICES AND MICROSTRUCTURES, 2017, 104 : 518 - 524
  • [45] WSe2/Pd Schottky diode combining van der Waals integrated and evaporated metal contacts
    Xie, Zhenda (xiezhenda@nju.edu.cn); Yan, Zhong (zhongyan@njust.edu.cn), 1600, American Institute of Physics Inc. (119):
  • [46] Self-driven WSe2 photodetectors enabled with asymmetrical van der Waals contact interfaces
    Changjian Zhou
    Shouyong Zhang
    Zhe Lv
    Zichao Ma
    Cui Yu
    Zhihong Feng
    Mansun Chan
    npj 2D Materials and Applications, 4
  • [47] Twist-angle-tunable spin texture in WSe2/graphene van der Waals heterostructures
    Yang, Haozhe
    Martin-Garcia, Beatriz
    Kimak, Jozef
    Schmoranzerova, Eva
    Dolan, Eoin
    Chi, Zhendong
    Gobbi, Marco
    Nemec, Petr
    Hueso, Luis E.
    Casanova, Felix
    NATURE MATERIALS, 2024, : 1502 - 1508
  • [48] Doping-free complementary WSe2 circuit via van der Waals metal integration
    Kong, Lingan
    Zhang, Xiaodong
    Tao, Quanyang
    Zhang, Mingliang
    Dang, Weiqi
    Li, Zhiwei
    Feng, Liping
    Liao, Lei
    Duan, Xiangfeng
    Liu, Yuan
    NATURE COMMUNICATIONS, 2020, 11 (01)
  • [49] Antiferromagnetic proximity coupling between semiconductor quantum emitters in WSe2 and van der Waals ferromagnets
    Liu, Na
    Gallaro, Cosmo M.
    Shayan, Kamran
    Mukherjee, Arunabh
    Kim, Bumho
    Hone, James
    Vamivakas, Nick
    Strauf, Stefan
    NANOSCALE, 2021, 13 (02) : 832 - 841
  • [50] Gate modulation of the spin current in graphene/WSe2 van der Waals heterostructure at room temperature
    Dastgeer, Ghulam
    Afzal, Amir Muhammad
    Jaffery, Syed Hassan Abbas
    Imran, Muhammad
    Assiri, Mohammed A.
    Nisar, Sobia
    JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 919