Room Temperature Copper Seed Layer Deposition by Plasma-Enhanced Atomic Layer Deposition

被引：3
|
作者：
Mao, J. [1 ]
Eisenbraun, E. [1 ]
Omarjee, V. [2 ]
Korolev, A. [2 ]
Dussarrat, C. [2 ]
机构：
[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
[2] Amer Air Liquide, Delaware Res & Technol Ctr, Newark, DE 19702 USA
来源：
SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS | 2011年 / 35卷 / 02期
关键词：
D O I：
10.1149/1.3568854
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
AbaCus, a newly developed fluorine-free precursor has been used for room temperature copper deposition using plasma enhanced chemical vapor deposition (PEALD). This process has been characterized and the film properties investigated in term of composition, deposition rate, resistivity, grain size and platability. Integration results with completely filled structures obtained demonstrate a high potential for use in advanced interconnect technologies.
引用
收藏
页码：125 / 132
页数：8
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