Magneto-transport properties of InAs/AlGaSb open quantum dot structures

被引：4
|
作者：
Maemoto, T
Kobayashi, T
Karasaki, T
Kita, K
Sasa, S
Inoue, M
Ishibashi, K
Aoyagi, Y
机构：
[1] Osaka Inst Technol, Dept Elect Engn, Asahi Ku, Osaka 5358585, Japan
[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510106, Japan
来源：
PHYSICA B-CONDENSED MATTER | 2002年 / 314卷 / 1-4期
关键词：
InAs/AlGaSb; open quantum dot; electron-wave interference; phase-breaking time;
D O I：
10.1016/S0921-4526(01)01431-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the magneto-transport properties of InAs/AlGaSb open quantum dot structures. The open dot structures have been fabricated by using electron beam lithography. The open dot structures are characterized by magneto resistance measurements at 4.2K. In addition to the Shubnikov-de Hass oscillations, aperiodic magneto-resistance fluctuations have been observed at low magnetic fields below I T. The amplitude of the fluctuations was quite large even at 4.2 K in comparison with the case of the GaAs/AlGaAs system. Electron-wave interference effect and phase-breaking times in InAs mesoscopic structures are discussed from the analyses using correlation functions of magneto-conductance fluctuations. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：481 / 485
页数：5
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