Surface phases of GaAs and InAs (001) found in the metalorganic vapor-phase epitaxy environment

被引：8
|
作者：
Li, L [1 ]
Han, BK [1 ]
Hicks, RF [1 ]
机构：
[1] Univ Calif Los Angeles, Dept Chem Engn, Los Angeles, CA 90095 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期
关键词：
D O I：
10.1063/1.122139
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have characterized the (2x4) and (4x2) reconstructions of GaAs and InAs (001) that are present in a metalorganic vapor-phase epitaxy (MOVPE) reactor. Scanning tunneling micrographs show that these surfaces are terminated with arsenic and gallium (or indium) dimers. The (2x4) dimer row exhibits a mottled appearance, which is ascribed to the adsorption of alkyl groups on some of the sites. On the (4x2), <10% of the surface is covered with small (2x4) islands. These results show that, in the MOVPE environment, the GaAs and InAs surface structures are nearly the same as those found in ultrahigh vacuum molecular beam epitaxy. (C) 1998 American Institute of Physics. [S0003-6951(98)02235-9].
引用
收藏
页码：1239 / 1241
页数：3
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