Self-consistent simulation of (AlGa)InP/GaInP visible lasers

被引：11

作者：

Foulger, DL ^{[1
]}

Smowton, PM ^{[1
]}

Blood, P ^{[1
]}

Mawby, PA ^{[1
]}

机构：

[1] UNIV COLL SWANSEA,DEPT ELECT & ELECT ENGN,SWANSEA SA2 8PP,W GLAM,WALES

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 1997年 / 144卷 / 01期

关键词：

(AlGa)InP/GaInP visible lasers; band edge spikes; band bending;

D O I：

10.1049/ip-opt:19971071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-consistent modelling of a 68 Angstrom quantum well separate confinement heterostructure device lasing at 670 nm has been used to investigate the variation of threshold current with temperature. The authors have obtained a fit to experimental data using data from the literature and calculated that the threshold current at room temperature is 698 Acm(-2), 98% of this is recombination in the well and 2% is carrier loss. At 400K, the threshold current density is 2713 Acm(-2), 41% of this is spontaneous emission in the well, 54% is carrier leakage through the p-cladding layer, 3% is spontaneous recombination from the waveguide core and 1% is non-radiative recombination from the waveguide core. The model has also been used to investigate band edge spikes at heterojunctions and the effects of band bending in the well region on the gain/current relation and carrier leakage.

引用

页码：23 / 29

页数：7

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