Analysis of reflectance difference spectra of Si(001)(2 x 1):As/Sb surfaces

被引:0
|
作者
Wei, LQ
Li, GW
Chang, YC
机构
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Chem, Urbana, IL 61801 USA
关键词
antimony; arsenic; DFT; excitonic and local-field effects; GW correction; pseudopotential; reflectance difference (RD) spectrum; semiconductor surface;
D O I
10.1016/S0039-6028(99)00675-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We compute the surface dielectric function anisotropy (SDA) and reflectance-difference (RD) spectra of Si(001)(2 x 1):As/Sb surfaces. The calculations are based on the local density approximation (LDA) scheme and utilize a novel set of basis functions, which are the products of plane waves in the surface planes and localized Gaussian functions in the direction normal to the surface. We identify and interpret the SDA and RD spectra in terms of interband transitions, and find that these transitions are mainly related to the electronic surface bands and surface-induced bands. Considering that the calculations based on the LDA of density functional theory (DFT) usually underestimate the band gaps for semiconductors, we make the many-body self-energy correction by shifting the related energy bands and then calculate the dielectric function anisotropy and reflectance difference spectra. We also take into consideration the excitonic and local field effects with a contact-potential model. The final fitted result for Si(001)(2 x 1):As surface is in reasonable agreement with experimental observations. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:14 / 20
页数:7
相关论文
共 50 条
  • [41] STM study of the Si(001)-(2 × 1) and GaAs(001)-(2 × 4) surfaces
    Briggs, G.A.D.
    Knall, J.
    Mayne, A.J.
    Jones, T.S.
    Weinberg, W.H.
    Avery, A.R.
    Nanotechnology, 1992, 3 (03) : 113 - 122
  • [42] Dimer-vacancy defects on the Si(001)-2X1 and the Ni-contaminated Si(001)-2Xn surfaces
    Koo, JY
    Yi, JY
    Hwang, C
    Kim, DH
    Lee, S
    Shin, DH
    PHYSICAL REVIEW B, 1995, 52 (24): : 17269 - 17274
  • [43] Theoretical study of Si(001)/Te -(1x1), (2x1) and (3x1) surfaces
    Miwa, RH
    Ferraz, AC
    BRAZILIAN JOURNAL OF PHYSICS, 1999, 29 (04) : 814 - 816
  • [44] Growth of SrTiO3 films on Si(001)-Sr(2 x 1) surfaces
    Bhuiyan, NK
    Kimura, H
    Tambo, T
    Tatsuyama, C
    APPLIED SURFACE SCIENCE, 2005, 249 (1-4) : 419 - 424
  • [45] INITIAL-STAGES OF GE GROWTH ON SI(001)(2X1) SURFACES
    HASEGAWA, S
    MINAKUCHI, Y
    NAKASHIMA, H
    SUPERLATTICES AND MICROSTRUCTURES, 1992, 12 (01) : 97 - 100
  • [46] ON A RUDIMENTARY MODEL OF INSTABILITY AND (2X1) RECONSTRUCTION OF SI (001) AND (111) SURFACES
    TOMASEK, M
    PICK, S
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1988, 38 (01) : 97 - 103
  • [47] INSTABILITY AND (2X1) RECONSTRUCTION OF SI(001) AND (111) SURFACES - A SIMPLE APPROACH
    TOMASEK, M
    THEORETICA CHIMICA ACTA, 1988, 74 (04): : 331 - 337
  • [48] PHOTOEMISSION-STUDY OF THE NEGATIVE ELECTRON-AFFINITY SURFACES OF O/CS/SI(001)2X1 AND O/K/SI(001)2X1
    ABUKAWA, T
    ENTA, Y
    KASHIWAKURA, T
    SUZUKI, S
    KONO, S
    SAKAMOTO, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04): : 3205 - 3209
  • [49] Identification of the Si 2p surface core level shifts on the Sb/Si(001)-(2 x 1) interface -: Reply
    De Padova, P
    Larciprete, R
    Quaresima, C
    Ottaviani, C
    Ressel, B
    Perfetti, P
    PHYSICAL REVIEW LETTERS, 1999, 82 (22) : 4565 - 4565
  • [50] Identification of the Si 2p surface core level shifts on the Sb/Si(001)-(2x1) interface
    De Padova, P
    Larciprete, R
    Quaresima, C
    Ottaviani, C
    Ressel, B
    Perfetti, P
    PHYSICAL REVIEW LETTERS, 1998, 81 (11) : 2320 - 2323