CATHODOLUMINESCENCE SPECTROSCOPY STUDY FOR NON-DESTRUCTIVE STRESS ANALYSIS OF THERMAL SILICON-OXIDE

被引：0

作者：

Goami, N. ^{[1
]}

Namazu, T. ^{[1
,2
]}

Yamashita, N. ^{[1
]}

Ichikawa, S. ^{[3
]}

Naka, N. ^{[4
]}

Kakinuma, S. ^{[4
]}

Nishikata, K. ^{[4
]}

Yoshiki, K. ^{[1
]}

Inoue, S. ^{[1
]}

机构：

[1] Univ Hyogo, Kobe, Hyogo 6500044, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Saitama, Japan

[3] Osaka Univ, Osaka, Japan

[4] HORIBA Ltd, Kyoto, Japan

来源：

2012 IEEE 25TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, a technique for non-destructive stress analysis of thermal silicon-oxide (SiOx) film using cathodoluminescence (CL) spectroscopy is described. The uniaxial tensile tester which can be used in a scanning electron microscope (SEM) chamber was developed to apply tensile stress to the film specimen. CL spectra of SiOx film were measured under various tensile stresses. The peak position linearly increased at 7.53x10(-3)eV/GPa with an increase in tensile stress. The peak intensity and half bandwidth changed with an increase in electron beam (EB) irradiation time period. Using Raman spectroscope and transmission electron microscope (TEM), it was found that EB irradiation produced silicon nanocrystals in SiOx film. The nanocrystals as well as applied stress affected CL spectra.

引用

页数：4

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