Sputtering of Spindt-type Field Emission Tip induced by Electron Stimulated Desorption of Gate Contaminations

被引：0
|
作者：
Zheng, Tao [1 ]
Zhang, Bo [1 ]
Gnade, Bruce [2 ]
机构：
[1] Univ Texas Dallas, Mat Sci Dept, Richardson, TX 75080 USA
[2] Southern Methodist Univ, Lyle Sch Engn, Dallas, TX 75275 USA
来源：
2017 30TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2017年
关键词：
Field emission; Spindt; sputtering; tip sharpening; emission stability;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The sputtering of Mo Spindt emitter due to the gate absorbent are observed when nA level emission current is collected by the gate for a duration of tens of seconds under a vacuum of 1x10(-7) Torr.
引用
收藏
页码：24 / 25
页数：2
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