Studies of carrier recombination in solution-processed CuIn(S,Se)2 through photoluminescence spectroscopy

被引：6
|
作者：
Duan, Hsin-Sheng [1 ,2 ]
Tang, Kuo-Chun [3 ]
Hsu, Wan-Ching [1 ,2 ]
Bob, Brion [1 ,2 ]
Song, Tze-Bin [1 ,2 ]
Lei, Bao [1 ,2 ]
Chou, Pi-Tai [3 ]
Yang, Yang [1 ,2 ]
机构：
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA
[3] Natl Taiwan Univ, Dept Chem, Taipei 10764, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 06期
基金：
美国国家科学基金会;
关键词：
CU(IN; GA)SE-2; THIN-FILMS; BUFFER LAYERS; SOLAR-CELLS;
D O I：
10.1063/1.4792738
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the effects of the cadmium sulfide (CdS) layer on defect passivation in hydrazine-based CuIn(S,Se)(2) (CISSe) samples through photoluminescence measurements. Significant changes in the emission profile of the CISSe film are observed after a CdS layer is deposited on CISSe. It is likely that Cd diffusion into the CISSe film becomes more severe as a result of the fine grain size of our solution-processed films. Enhanced emission yields and longer carrier lifetimes are, thus, observed in Cd-treated (CdS-coated or Cd-soaked) CISSe films, indicating the action of Cd ions on Cu vacancies sites and a decrease in non-radiative recombination. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792738]
引用
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页数：4
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