Design of a Gain-Boosted Amplifier for Differential Bottom-Plate Sampling in 0.13-μm CMOS

被引:0
|
作者
Kloka, Maksym [1 ,2 ]
Tang, Hua [1 ]
机构
[1] Univ Minnesota, Dept Elect Engn, Duluth, MN 55812 USA
[2] Stryker Corp, Kalamazoo, MI 49001 USA
关键词
D O I
暂无
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
In this paper, systematic design of a fully differential Gain-Boosted telescopic amplifier is presented. The main amplifier uses two separate Folded-Telescopic amplifiers to boost the gain. Limited output voltage swing is overcome through the use of second-stage Adaptive Biasing (AB) amplifiers with high current drive capability. The complete Gain-Boosted amplifier is used in a Differential Bottom-Plate Sample and Hold (SH) circuit where a Bootstrap circuit is employed on the sampling switches to overcome the voltage headroom limitations. The complete design is implemented in IBM 1.2V 0.13-mu m technology. Simulations show that the Gain-Boosted amplifier achieves 108dB of gain with only 0.5mW of power consumption. The SH circuit can operate at 1 Mega Samples (MS) per second for input signal amplitudes of 500mV.
引用
收藏
页码:145 / 148
页数:4
相关论文
共 50 条
  • [31] A 900-MHz 29.5-dBm 0.13-μm CMOS HiVP power amplifier
    Wu, Lei
    Dettmann, Ingo
    Berroth, Manfred
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (09) : 2040 - 2045
  • [32] A miniature Q-band low noise amplifier using 0.13-μm CMOS technology
    Tsai, Jeng-Han
    Chen, Wei-Chien
    Wang, To-Po
    Huang, Tian-Wei
    Wang, Huei
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (06) : 327 - 329
  • [33] A 10-Gb/s Inductorless AGC Amplifier with 45-dB Linear Variable Gain Control in 0.13-μm CMOS
    Ray, Sagar
    Hella, Mona M.
    2015 IEEE 58TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2015,
  • [34] Radio frequency polyphase filter design in 0.13-μm CMOS for wireless communications
    Haddad, F.
    Bouchakour, R.
    Rahajandraibe, W.
    Zaied, L.
    Frioui, O.
    2007 14TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-4, 2007, : 833 - 836
  • [35] Design of a 0.13-μm V-band Millimeter-Wave CMOS Low-Noise Amplifier and Measurement Methodology
    Kuo, Hsin-Chih
    Yang, Chu-Yun
    Yeh, Jin-Fu
    Chuang, Huey-Ru
    APMC: 2008 ASIA PACIFIC MICROWAVE CONFERENCE (APMC 2008), VOLS 1-5, 2008, : 1994 - 1997
  • [36] A broadband low-noise front-end amplifier for ultra wideband in 0.13-μm CMOS
    Gharpurey, R
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (09) : 1983 - 1986
  • [37] Design of RF to DC Conversion Circuit for Energy Harvesting in CMOS 0.13-μm Technology
    Rosli, M. A.
    Murad, S. A. Z.
    Norizan, M. N.
    Ramli, M. M.
    4TH ELECTRONIC AND GREEN MATERIALS INTERNATIONAL CONFERENCE 2018 (EGM 2018), 2018, 2045
  • [38] 10-Gb/s 0.13-μm CMOS Inductorless Modified-RGC Transimpedance Amplifier
    Taghavi, Mohammad Hossein
    Belostotski, Leonid
    Haslett, James W.
    Ahmadi, Peyman
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2015, 62 (08) : 1971 - 1980
  • [39] Design of Self-Coupling Enhanced Resonator in 0.13-μm (Bi)-CMOS Technology
    Bautista, Meriam
    Zhu, He
    Zhu, Xi
    Yang, Yang
    2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019), 2019,
  • [40] Low power V-band low noise amplifier using 0.13-μm CMOS technology
    Wu, Chung-Yu
    Chen, Po-Hung
    2007 14TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS 1-4, 2007, : 1328 - 1331