Characterization of polysilicon thin-film transistor gate dielectrics

被引：0
|
作者：
Zaman, RJ
Damiano, J
Batra, S
Manning, M
Banerjee, SK
机构：
来源：
PROCEEDINGS OF THE THIRD SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES | 1997年 / 96卷 / 23期
关键词：
dielectric breakdown; thinner oxide; polarity effect; Q(BD); charge trapping; interface; temperature; trap generation; Delta V; hole trapping; nitride thickness; Fowler-Nordheim; recombination; field; band diagram; reliability;
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Choice of gate dielectric has a significant impact on device performance and lifetime. In this study, various polysilicon thin-film transistor (poly TFT) chemically vapor deposited (CVD) dielectrics including SiO2 (silicon dioxide), Si3N4-SiO2 (nitride-oxide i.e., NO) stacks and oxide-nitride-oxide (ONO) stacks have been investigated and several possible breakdown mechanisms are proposed based on electrical results and previous studies. The breakdown characteristics of the oxides depend on different parameters such as oxide thickness, temperature and polarity.
引用
收藏
页码：104 / 122
页数：19
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