Infra-red, X-ray photoelectron spectroscopy and electrical studies of r.f. sputtered amorphous silicon carbide films

被引:3
|
作者
Han, LJ
Ong, TY
Prakash, S
Chua, LG
Choi, WK
Tan, LS
Loh, FC
Tan, KL
机构
[1] Natl Univ Singapore, Dept Elect Engn, Microelect Lab, Singapore 119260, Singapore
[2] Natl Univ Singapore, Dept Phys, Surface Sci Lab, Singapore 119260, Singapore
关键词
annealing; FTIR; amorphous silicon carbide; sputtering; X-ray photoelectron spectroscopy;
D O I
10.1016/S0040-6090(98)01660-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of furnace and rapid thermal annealing (RTA) on the electrical and structural properties of r.f. sputtered amorphous silicon carbide films were investigated. It was found that RTA has a similar effect on the structural properties of our films as compared with furnace annealing. The conductance results showed that the effect of annealing on the interface trapped charge density (D-it) for the unhydrogenated films can be explained using the conclusion obtained from the infra-red (IR) and X-ray photoelectron spectroscopy (XPS) results. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:441 / 444
页数:4
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