Aerosol assisted chemical vapour deposition of transparent conductive aluminum-doped zinc oxide thin films from a zinc triflate precursor

被引:10
|
作者
Manzi, Joe A. [1 ]
Knapp, Caroline E. [1 ]
Parkin, Ivan P. [1 ]
Carmalt, Claire J. [1 ]
机构
[1] UCL, Dept Chem, Mat Chem Ctr, 20 Gordon St, London WC1H 0AJ, England
基金
英国工程与自然科学研究理事会;
关键词
Zinc oxide; Zinc triflate; Transparent conducting oxide; Thin films; Aerosol assisted chemical vapour deposition; PULSED-LASER DEPOSITION; INDIUM-TIN-OXIDE; OPTICAL BAND-GAP; ZNO FILMS; ELECTRICAL-PROPERTIES; CVD; GROWTH; MOCVD; TEMPERATURE; FABRICATION;
D O I
10.1016/j.tsf.2016.09.008
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The use of zinc triflate (trifluoromethanesulfonate), [Zn(OTf)(2)]as a precursor in the aerosol assisted chemical vapour deposition of zinc oxide thin films is described. Aluminum doped zinc oxide (AZO) thin films are also shown to be deposited when aluminum acetylacetonate [Al(acac)(3)] was introduced into the precursor solution, illustrating the versatility of this system. Film characterization techniques include glancing angle X-ray powder diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and optical and electrical measurements. AZO films with an Al content of 7 at.% were found to have favourable transparent conducting oxide properties with simultaneous high transparency (>80%) in the visible light region and a low electrical resistivity (1.96 x 10(-3) Omega cm). (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:477 / 481
页数:5
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