Identification of Lone-Pair Surface States on Indium Oxide

被引:17
|
作者
Davies, Daniel W. [1 ]
Walsh, Aron [2 ]
Mudd, James J. [3 ,4 ]
McConville, Chris F. [3 ,5 ]
Regoutz, Anna [2 ]
Kahk, J. Matthias [2 ]
Payne, David J. [2 ]
Dhanak, Vin R. [6 ]
Hesp, David [6 ]
Pussi, Katariina [7 ]
Lee, Tien-Lin [4 ]
Egdell, Russell G. [8 ]
Zhang, Kelvin H. L. [9 ]
机构
[1] Univ Bath, Dept Chem, Bath BA2 7AY, Avon, England
[2] Imperial Coll London, Dept Mat, Exhibit Rd, London SW7 2AZ, England
[3] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
[4] Diamond Light Source Ltd, Didcot OX11 ODE, Oxon, England
[5] RMIT Univ, Sch Sci, Melbourne, Vic 3001, Australia
[6] Univ Liverpool, Dept Phys, Liverpool L69 3BX, Merseyside, England
[7] Lappeenranta Univ Technol, LUT Sch Engn Sci, POB 20, FIN-53851 Lappeenranta, Finland
[8] Univ Oxford, Inorgan Chem Lab, Dept Chem, South Parks Rd, Oxford OX1 3QR, England
[9] Xiamen Univ, Coll Chem & Chem Engn, State Key Lab Phys Chem Solid Surfaces, Xiamen 361005, Peoples R China
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2019年 / 123卷 / 03期
基金
英国工程与自然科学研究理事会; 芬兰科学院;
关键词
X-RAY PHOTOEMISSION; ELECTRONIC-STRUCTURE; GAS-PHASE; STEREOCHEMISTRY; TIN; RELIABILITY; ORIGIN; IN2O3; BULK; SNO2;
D O I
10.1021/acs.jpcc.8b08623
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Indium oxide is widely used as a transparent electrode in optoelectronic devices and as a photocatalyst with activity for reduction of CO2. However, very little is known about the structural and electronic properties of its surfaces, particularly those prepared under reducing conditions. In this report, directional "lone-pair" surface states associated with filled 5s(2) orbitals have been identified on vacuum-annealed In2O3(111) through a combination of hard and soft X-ray photoemission spectroscopy and density functional theory calculations. The lone pairs reside on indium ad-atoms in a formal +1 oxidation state, each of which traps two electrons into a localized hybrid orbital protruding away from the surface and lying just above the valence band maximum in photoemission spectra. The third electron associated with the ad-atoms is delocalized into the conduction band, thus producing the surface electron accumulation layer identified previously on vacuum-annealed In2O3(111) (1 X 1) surfaces. The surface structure is further supported by low-energy electron diffraction, but there is no chemical shift in indium core level X-ray photoelectron spectra between surface In(I) ad-atoms and bulk In(III). The 5s(2) lone pairs confer Lewis basicity on the surface In sites and may have a pronounced impact on the catalytic or photocatalytic activity of reduced In2O3.
引用
收藏
页码:1700 / 1709
页数:10
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