BONDING BANDS, LONE-PAIR BANDS, AND IMPURITY STATES IN CHALCOGENIDE SEMICONDUCTORS

被引：446

作者：

KASTNER, M

机构：

来源：

PHYSICAL REVIEW LETTERS | 1972年 / 28卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.28.355

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：355 / &

共 50 条

[1] Lone-pair states as a key to understanding impact ionization in chalcogenide semiconductors
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[9] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
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[10] THEORY OF SEMICONDUCTORS WITH EXCITED IMPURITY BANDS
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