Switching Behavior in Rare-Earth Films Fabricated in Full Room Temperature

被引：20

作者：

Pan, Tung-Ming ^{[1
]}

Lu, Chih-Hung ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 04期

关键词：

CeOx; EuOx; forming free; PrOx; rare-earth (RE); resistive-switching (RS); SmOx; TRANSITION; NANOFILAMENTS; MECHANISMS; OXIDES;

D O I：

10.1109/TED.2012.2182676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we investigated the forming-free resistive-switching (RS) behavior in the Ru/REOx/TaN (RE = Ce, Pr, Sm, and Eu) memory device using CeOx, PrOx, SmOx, and EuOx thin films fabricated in a full-room-temperature process. The dominant conduction mechanism of Ru/REOx/TaN memory devices in the low-resistance state is ohmic behavior, whereas the high-resistance state is space-charge-limited conduction. The Ru/CeOx/TaN devices show a high resistance ratio of > 10(4), reliable data retention for 10(5) s, and stable endurance characteristics for up to 1000 cycles. This result suggests the high concentration of the cerium ions and the low density of chemical defects (oxygen vacancies) in the CeOx film. The Ru/CeOx/TaN structure memory is a very promising candidate for future nonvolatile RS memory applications.

引用

页码：956 / 961

页数：6

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