Effects of total ionizing dose on single event effect sensitivity of FRAMs

被引：4

作者：

Ji, Qinggang ^{[1
,2
]}

Liu, Jie ^{[1
]}

Li, Dongqing ^{[1
,2
]}

Liu, Tianqi ^{[1
]}

Ye, Bing ^{[1
]}

Zhao, Peixiong ^{[1
,2
]}

Sun, Youmei ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China

[2] Univ Chinese Acad Sci, Sch Nucl Sci & Technol, Beijing 100049, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2019年 / 95卷

基金：

中国国家自然科学基金;

关键词：

Ferroelectric random access memory; Total ionizing dose; Single event effect; TCAD simulation; RADIATION; IRRADIATION; IMPACT;

D O I：

10.1016/j.microrel.2019.02.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability of ferroelectric random access memories (FRAMs) is an important issue in Space application. In this work, we investigated the impact of total ionizing dose (TID) on single event effect (SEE) sensitivity of FRAMs. Five types of errors were detected. The event cross section detected in dynamic tests decreased after irradiation. Biased devices during TID irradiation had a greater decrease in event cross section than unbiased devices. TCAD simulations were performed to investigate the effects of heavy ions on memory cells of FRAMs. The collected charges at the drain of NMOS transistors induced by incident ions had a negative impact on polarized state of the ferroelectric capacitors.

引用

页码：1 / 7

页数：7

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