Au nanocrystal flash memory reliability and failure analysis

被引：0
|
作者：
Singh, Pawan K. [1 ,2 ]
Singh, Kaushal K. [2 ]
Hofmann, Ralf [2 ]
Armstrong, Karl [2 ]
Krishna, Nety [2 ]
Mahapatra, Souvik [1 ,2 ]
机构：
[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
[2] Appl Mat Inc, Santa Clara, CA 95054 USA
来源：
IPFA 2008: PROCEEDINGS OF THE 15TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we investigate the memory performance and reliability of An nanocrystal memory devices. We analyze the Au NC formation process and fabricate actual test wafers for electrical characterization. With reference to good Pt NC devices, poor performance of Au NC devices is investigated in detail by analytical and electrical methods.
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页码：214 / +
页数：2
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