Planning The Electron Traffic In Semiconductor Networks: A Mesoscopic Analog Of The Braess Paradox Encountered In Road Networks

被引：0

作者：

Huant, S. ^{[1
,2
]}

Baltazar, S. ^{[3
,6
]}

Liu, P. ^{[1
,2
]}

Sellier, H. ^{[1
,2
]}

Hackens, B. ^{[4
]}

Martins, F. ^{[4
]}

Bayot, V. ^{[1
,2
,4
]}

Wallart, X. ^{[5
]}

Desplanque, L. ^{[5
]}

Pala, M. G. ^{[3
]}

机构：

[1] CNRS, Inst Neel, BP 166, F-38042 Grenoble, France

[2] Univ Grenoble 1, F-38041 Grenoble, France

[3] Grenoble INP, IMEP LAHC, Minatec, F-38016 Grenoble, France

[4] Catholic Univ Louvain, IMCN, NAPS, Louvain, Belgium

[5] UST Lille, IEMN, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France

[6] Univ Santiago, Dept Fis, Santiago 9170124, Chile

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

Braess paradox; semiconductor networks; scanning-gate microscopy; GaInAs;

D O I：

10.1063/1.4848369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By combining quantum simulations of electron transport and scanning-gate microscopy, we have shown that the current transmitted through a semiconductor two-path rectangular network in the ballistic and coherent regimes of transport can be paradoxically degraded by adding a third path to the network. This is analogous to the Braess paradox occurring in classical networks. Simulations reported here enlighten the role played by congestion in the network.

引用

页码：229 / +

页数：2

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