X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors

被引：2

作者：

Ohkubo, M ^{[1
]}

Fons, P

Kushino, A

Chen, YE

Ukibe, M

Kitajima, Y

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058568, Japan

[2] High Energy Accelerator Res Org, Tsukuba, Ibaraki 3050801, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2006年 / 559卷 / 02期

关键词：

superconducting tunnel junction; X-ray absorption spectroscopy; high-k oxide; field effect transistor;

D O I：

10.1016/j.nima.2005.12.120

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Fluorescent-yield X-ray absorption spectroscopy (XAS) taken with a superconducting tunnel junction (STJ) detector has been employed to study the oxygen K-edge structure of Hf-Al oxide gate insulators for next-generation metal-oxide-semiconductor (MOS) devices. Thermal stability is a critical issue in the MOS fabrication processes. We show that O K-edge XAS indicates that no change in the electronic band structure occurs due to thermal annealing. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：731 / 733

页数：3

共 26 条

[21] X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface
Vitchev, RG
Pireaux, JJ
Conard, T
Bender, H
Wolstenholme, J
Defranoux, C
APPLIED SURFACE SCIENCE, 2004, 235 (1-2) : 21 - 25
[22] Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using x-ray photoelectron spectroscopy
Oh, H. J.
Lin, J. Q.
Lee, S. J.
Dalapati, G. K.
Sridhara, A.
Chi, D. Z.
Chua, S. J.
Lo, G. Q.
Kwong, D. L.
APPLIED PHYSICS LETTERS, 2008, 93 (06)
[23] In situ electron microscopy and X-ray photoelectron spectroscopy for high capacity anodes in next-generation ionic liquid-based Li batteries
Tsuda, Tetsuya
Imanishi, Akihito
Sano, Teruki
Sawamura, Amane
Kamidaira, Toshiki
Chen, Chih-Yao
Uchida, Satoshi
Kusumoto, Shohei
Ishikawa, Masashi
Kuwabata, Susumu
ELECTROCHIMICA ACTA, 2018, 279 : 136 - 142
[24] Study of amorphous alumina coatings for next-generation nuclear reactors: High-temperature in-situ and post-mortem Raman spectroscopy and X-ray diffraction
Gaweda, Magdalena
Jelen, Piotr
Zaborowska, Agata
Diduszko, Ryszard
Kurpaska, Lukasz
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2024, 321
[25] Soft X-Ray Absorption Spectroscopy Investigation of HfO2 and ZrO2 Thin Films with Modulated Crystalline Phase by Varying Dopants (Al, Si, Gd) for Ferroelectric and High-k Dielectric Applications
Kim, Hyun-Cheol
Popovici, Mihaela Ioana
Herrero-Martin, Javier
Meersschaut, Johan
Dekkers, Harold
Kwon, Dae Seon
Van Houdt, Jan
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2025,
[26] X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high-k dielectric prepared by sol-gel spin coating method
Kao, Kuo-Hsing
Chuang, Shiow-Huey
Wu, Woei-Cherng
Chao, Tien-Sheng
Chen, Jian-Hao
Ma, Ming-Wen
Gao, Reui-Hong
Chiang, Michael Y.
APPLIED PHYSICS LETTERS, 2008, 93 (09)

← 1 2 3 →