X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors

被引：2
|
作者：
Ohkubo, M [1 ]
Fons, P
Kushino, A
Chen, YE
Ukibe, M
Kitajima, Y
机构：
[1] Natl Inst Adv Ind Sci & Technol, AIST, Tsukuba, Ibaraki 3058568, Japan
[2] High Energy Accelerator Res Org, Tsukuba, Ibaraki 3050801, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2006年 / 559卷 / 02期
关键词：
superconducting tunnel junction; X-ray absorption spectroscopy; high-k oxide; field effect transistor;
D O I：
10.1016/j.nima.2005.12.120
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Fluorescent-yield X-ray absorption spectroscopy (XAS) taken with a superconducting tunnel junction (STJ) detector has been employed to study the oxygen K-edge structure of Hf-Al oxide gate insulators for next-generation metal-oxide-semiconductor (MOS) devices. Thermal stability is a critical issue in the MOS fabrication processes. We show that O K-edge XAS indicates that no change in the electronic band structure occurs due to thermal annealing. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：731 / 733
页数：3
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