Retention Model for High-density ReRAM

被引：0
|
作者：
Wei, Z. [1 ]
Takagi, T. [1 ]
Kanzawa, Y. [1 ]
Katoh, Y. [1 ]
Ninomiya, T. [1 ]
Kawai, K. [1 ]
Muraoka, S. [1 ]
Mitani, S. [1 ]
Katayama, K. [1 ]
Fujii, S. [1 ]
Miyanaga, R. [1 ]
Kawashima, Y. [1 ]
Mikawa, T. [1 ]
Shimakawa, K. [1 ]
Aono, K. [1 ]
机构：
[1] Panasonic Corp, Devices Module Dev Ctr, Minami Ku, Kyoto 6018413, Japan
来源：
2012 4TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) | 2012年
关键词：
ReRAM; Retention; Filament; RESISTIVE-SWITCHING MEMORIES;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
A retention model for both the high resistance state and low resistance state of the bipolar ReRAM is developed. Degradation of resistance is caused by the oxygen vacancy profile in filament changing due to oxygen diffusion.
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收藏
页数：4
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