Ion implantation technique for conductivity control of GaN

被引：0
|
作者：
Narita, Tetsuo [1 ]
Kataoka, Keita [1 ]
Kanechika, Masakazu [1 ]
Kachi, Tetsu [2 ]
Uesugi, Tsutomu [1 ]
机构：
[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801118, Japan
[2] Nagoya Univ, Nagoya, Aichi, Japan
来源：
2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) | 2017年
关键词：
DEFECTS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：87 / 90
页数：4
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